SERGEY ZAITSEV
President
Dr. Zaitsev has more than 30 years of experience in semiconductor optoelectronics design. He has published over 130 papers and communications in this field. In 2001 he was elected as Photonics/IEEE Senior Member for his distinguished achievements in the development of advanced diode lasers. After finishing his academic career, he works in the US optoelectronics industry. Prior to establishing SVZ Technologies, Dr. Zaitsev served as Principal Investigator in multiple programs sponsored by such agencies as NASA, DARPA, US Navy, U.S. Air Force, MDA, DOE, etc.
As Principal Scientist, he supervised commercial projects related to fiber optical communications and the development of advanced semiconductor materials. His expertise covers visible and infrared optics, optoelectronics, medical and metric devices, compound semiconductors, technologies, and modern processing equipment for the semiconductor industry.
• GaN metrology (cathodoluminescence, EBIC, SEM) (custom equipment for NATO projects)
• GaN/diamond for high-power transistor application (technology development, US patent)
• InGaAs large area APD (wafer design and technology)
• InGaAs APD arrays (MIT technology transfer)
• MIR quadrant detectors (GaSb)
• 1.064 um MOPA for NASA LIDARs.
• Superlattice mesa passivation technology (GaSb)
• GaSb-based MIR PD arrays
• AlGaAs type-I quantum cascade laser (THz range) (first lasing at 77K).
• Surface-emitting photonic integrated circuits (US patent)
• Type II quantum cascade lasers (achieved first CW operation at 4.5 um)
• VCSELs with oxide apertures (technology optimization and testing)
• Quantum dot laser diodes (set world records)
• Pulsed Q-switching laser diodes for ultra-high precision LIDARs (set world records)
• High power InGaAsP/InP laser diodes (set world records)
• Design of a satellite-based gamma-ray polarimeter for black holes studies (simulation and hardware)
• Time-dependence of gamma-ray emission from solar flare (numerical simulation, Master degree work)