{"id":125,"date":"2012-04-26T20:19:21","date_gmt":"2012-04-27T01:19:21","guid":{"rendered":"http:\/\/svz-technologies.com\/?page_id=125"},"modified":"2024-08-16T18:26:22","modified_gmt":"2024-08-16T23:26:22","slug":"management","status":"publish","type":"page","link":"https:\/\/svz-technologies.com\/?page_id=125","title":{"rendered":"Management"},"content":{"rendered":"\n
\"\"<\/a><\/figure>\n<\/div>\n\n\n

SERGEY ZAITSEV<\/strong><\/p>\n

President<\/span><\/p>\n

Dr. Zaitsev brings over 30 years of experience in semiconductor optoelectronics design. He has authored more than 130 publications in this field. In 2001, he was elected as a Senior Member of Photonics\/IEEE in recognition of his distinguished contributions to the development of advanced diode lasers. Following his academic career, Dr. Zaitsev transitioned to the U.S. optoelectronics industry. Before founding SVZ Technologies, he served as Principal Investigator on numerous programs sponsored by agencies such as NASA, DARPA, the U.S. Navy, the U.S. Air Force, MDA, and the DOE.<\/span><\/p>\n

As a Principal Scientist, he oversaw commercial projects related to fiber optic communications and the development of advanced semiconductor materials. His expertise spans visible and infrared optics, optoelectronics, medical and metric devices, compound semiconductors, as well as the technologies and modern processing equipment essential to the semiconductor industry.<\/span><\/p>\n

\u2022 GaN metrology (cathodoluminescence, EBIC, SEM) (custom equipment for NATO projects)
\u2022 GaN\/diamond for high-power transistor application (technology development, US patent)
\u2022 InGaAs large area APD (wafer design and technology)
\u2022 InGaAs APD arrays (MIT technology transfer)
\u2022 MIR quadrant detectors (GaSb)
\u2022 1.064 um MOPA for NASA LIDARs.
\u2022 Superlattice mesa passivation technology (GaSb)
\u2022 GaSb-based MIR PD arrays
\u2022 AlGaAs type-I quantum cascade laser (THz range) (first lasing at 77K).
\u2022 Surface-emitting photonic integrated circuits (US patent)
\u2022 Type II quantum cascade lasers (achieved first CW operation at 4.5 um)
\u2022 VCSELs with oxide apertures (technology optimization and testing)
\u2022 Quantum dot laser diodes (set world records)
\u2022 Pulsed Q-switching laser diodes for ultra-high precision LIDARs (set world records)
\u2022 High power InGaAsP\/InP laser diodes (set world records)
\u2022 Design of a satellite-based gamma-ray polarimeter for black holes studies (simulation and hardware)
\u2022 Time-dependence of gamma-ray emission from solar flare (numerical simulation, Master degree work)<\/span>
<\/span><\/p>\n\n\n

<\/p>\n","protected":false},"excerpt":{"rendered":"

SERGEY ZAITSEV President Dr. Zaitsev brings over 30 years of experience in semiconductor optoelectronics design. He has authored more than 130 publications in this field. In 2001, he was elected as a Senior Member of Photonics\/IEEE in recognition of his distinguished contributions to the development of advanced diode lasers. Following his academic career, Dr. Zaitsev transitioned to the U.S. optoelectronics industry. Before founding SVZ Technologies, he served as Principal Investigator on numerous programs sponsored by agencies such as NASA, DARPA, the U.S. Navy, the U.S. Air Force, MDA, and the DOE. As a Principal Scientist, he oversaw commercial projects related to fiber optic communications and the development of advanced semiconductor materials. His expertise spans visible and infrared optics, optoelectronics, medical and metric devices, compound semiconductors, as well as the technologies and modern processing equipment essential to the semiconductor industry. \u2022 GaN metrology (cathodoluminescence, EBIC, SEM) (custom equipment for NATO projects)\u2022 GaN\/diamond for high-power transistor application (technology development, US patent)\u2022 InGaAs large area APD (wafer design and technology)\u2022 InGaAs APD arrays (MIT technology transfer)\u2022 MIR quadrant detectors (GaSb)\u2022 1.064 um MOPA for NASA LIDARs.\u2022 Superlattice mesa passivation technology (GaSb)\u2022 GaSb-based MIR PD arrays\u2022 AlGaAs type-I quantum cascade laser (THz range) (first […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"_links":{"self":[{"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/pages\/125"}],"collection":[{"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/svz-technologies.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=125"}],"version-history":[{"count":33,"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/pages\/125\/revisions"}],"predecessor-version":[{"id":953,"href":"https:\/\/svz-technologies.com\/index.php?rest_route=\/wp\/v2\/pages\/125\/revisions\/953"}],"wp:attachment":[{"href":"https:\/\/svz-technologies.com\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=125"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}